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Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/151691
Kind Code:
A1
Abstract:
Provided are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate and a dielectric layer located on a first surface of the substrate, wherein a plurality of first metal layers are provided in the substrate, a magnetic core is provided in the dielectric layer, the orthographic projection of the magnetic core on the first surface is a closed annular pattern, the first metal layer has a first end and a second end which are opposite each other, the orthographic projection of the first end on the first surface is located in an area enclosed by the closed annular pattern, and the orthographic projection of the second end on the first surface is located outside the area enclosed by the closed annular pattern; and a plurality of second metal layers, which are located on the side of the magnetic core that is away from the substrate and are located on two opposite sides of the magnetic core, wherein one end of the second metal layer is electrically connected to the first end of one first metal layer, the other end thereof is electrically connected to the second end of another first metal layer, the plurality of first metal layers and the plurality of second metal layers form a solenoid-shaped metal layer, and there is a gap between the metal layer and the magnetic core. The embodiments of the present application are conducive to improving the electrical performance of an inductor in a semiconductor structure and reducing the space occupied by the inductor.

Inventors:
WU TONG (CN)
Application Number:
PCT/CN2021/107613
Publication Date:
July 21, 2022
Filing Date:
July 21, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/64; H01F17/04
Foreign References:
CN105336842A2016-02-17
CN105679488A2016-06-15
CN101740195A2010-06-16
CN112864136A2021-05-28
Attorney, Agent or Firm:
BEIJING LINKAW PATENT ATTORNEY LAW FIRM (CN)
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