Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, RADIO FREQUENCY CIRCUIT, AND TERMINAL
Document Type and Number:
WIPO Patent Application WO/2023/044773
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of semiconductors, provide a semiconductor structure and a manufacturing method therefor, a radio frequency circuit, and a terminal, and are used for manufacturing a high-performance semiconductor structure. The semiconductor structure comprises a substrate, comprising a collector region; a base region, provided on the substrate, the base region comprising an intrinsic base region and an outer base region, the intrinsic base region and the outer base region having the same material, and the intrinsic base region being in contact with the collector region; an auxiliary layer, provided on the base region, the auxiliary layer having a first opening; an interlayer protection layer, provided on the auxiliary layer, the interlayer protection layer having a second opening, the second opening being located above the first opening, and the interlayer protection layer being exposed out of the auxiliary layer; and an emission region, provided on the interlayer protection layer, and being in contact with the intrinsic base region by means of the first opening and the second opening.
Inventors:
JIAN ZHONGXIANG (CN)
XU XIANGMING (CN)
XU XIANGMING (CN)
Application Number:
PCT/CN2021/120384
Publication Date:
March 30, 2023
Filing Date:
September 24, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/737
Foreign References:
| CN102544082A | 2012-07-04 | |||
| CN103094102A | 2013-05-08 | |||
| US20150162322A1 | 2015-06-11 | |||
| CN101834135A | 2010-09-15 | |||
| US6384469B1 | 2002-05-07 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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