SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/133976

A1

The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a first substrate (110) having a first surface (100), wherein the first substrate (110) is provided with an electrical connection column (120) protruding from the first surface (100); a second substrate (140) having a second surface (130), wherein a conductive column (150) is arranged in the second substrate (140), the second surface (130) is further provided with a first groove (160) and a second groove (170), the first groove (160) is located above the conductive column (150), at least part of a side surface of the conductive column (150) is exposed from the second groove (170), a protruding part of the electrical connection column (120) is located in the second groove (170), and part of a side surface of the electrical connection column (120) and part of the side surface of the conductive column (150) are staggered and overlapped in a direction perpendicular to the first surface (100) or the second surface (130); and a welding structure (180), wherein the first groove (160) is filled with at least part of the welding structure (180).

WANG LUGUANG (CN)
HUANG JINRONG (CN)

PCT/CN2022/078108

July 20, 2023

February 25, 2022

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CHANGXIN MEMORY TECH INC (CN)

H01L21/768; H01L23/482; H01L23/525

CN1708840A	2005-12-14
CN105097777A	2015-11-25
US20130292823A1	2013-11-07
US20150364441A1	2015-12-17
JP2014143305A	2014-08-07

SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)

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