Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/133977
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure comprises: a first substrate (110) provided with a first surface (100), wherein the first substrate (110) is provided with an electrical connection column (120) protruding from the first surface (100), and the top of the electrical connection column (120) is provided with a first groove (130); a second substrate (150) provided with a second surface (140), wherein the second substrate (150) is provided with a conductive column (160), the second substrate (150) is further provided with a second groove (170), the second groove (170) exposes the top surface of the conductive column (160) and at least part of the side surface, the electrical connection column (120) is partially located in the second groove (170), and the conductive column (160) is partially located in the first groove (130); and a welding structure (180), wherein at least part of the welding structure (180) fills the second groove (170), and at least part of the welding structure (180) further fills between the conductive column (160) and the first groove (130).
Inventors:
WANG LUGUANG (CN)
Application Number:
PCT/CN2022/078109
Publication Date:
July 20, 2023
Filing Date:
February 25, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
B81B7/02; H01L23/538; B81C3/00
Foreign References:
| CN112456436A | 2021-03-09 | |||
| CN111199946A | 2020-05-26 | |||
| CN112614807A | 2021-04-06 | |||
| CN108573883A | 2018-09-25 | |||
| CN111081646A | 2020-04-28 | |||
| US20150287687A1 | 2015-10-08 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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