Title:
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/027202
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor structure manufacturing method and a semiconductor structure. The method comprises: providing a substrate (100), and forming an initial stack structure on the substrate (100), the initial stack structure comprising first dielectric layers (11) and target semiconductor layers (12) which are sequentially and alternately stacked in a first direction; forming, in the initial stack structure, a first trench isolation structure (131), a second trench isolation structure (132), and a third trench isolation structure (133) which are arranged at intervals in a second direction and extend in a third direction, and defining two gate trench regions (134) spaced apart in the third direction; and in the gate trench regions (134), forming target gate trenches (14) having the bottom surfaces in contact with the substrate (100), and in the target gate trenches (14), forming two gate structures (20) surrounding the target semiconductor layers (12) and spaced apart in the second direction.
Inventors:
WANG HONG (CN)
LI XIAOJIE (CN)
LI XIAOJIE (CN)
Application Number:
PCT/CN2023/088579
Publication Date:
February 08, 2024
Filing Date:
April 17, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H10B51/30; H10B12/00
Foreign References:
| CN113410255A | 2021-09-17 | |||
| CN110729189A | 2020-01-24 | |||
| CN114141712A | 2022-03-04 | |||
| CN114141713A | 2022-03-04 | |||
| CN114420644A | 2022-04-29 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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