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Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/015639
Kind Code:
A1
Abstract:
A semiconductor structure and a method for forming same, which are used for improving the stability of a bit line structure. The semiconductor structure is formed in a bit line trench (112b) in a substrate (101), and comprises: a bit line conductive layer (108), which is formed in the bit line trench (112b), wherein the top surface of the bit line conductive layer (108) is higher than a surface of the substrate (101); a barrier layer (107), which is at least partially formed between the bit line conductive layer (108) and an inner wall of the bit line trench (112b); and an isolation layer (103a) which is formed at the top of the bit line conductive layer (108).

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Inventors:
FANG JIA (CN)
LIU ZHONGMING (CN)
YU YEXIAO (CN)
Application Number:
PCT/CN2021/116908
Publication Date:
February 16, 2023
Filing Date:
September 07, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L21/8242
Foreign References:
CN113035872A2021-06-25
CN113097146A2021-07-09
CN109979940A2019-07-05
CN111048467A2020-04-21
CN112951769A2021-06-11
US20050173750A12005-08-11
US20100164114A12010-07-01
US6303424B12001-10-16
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
Download PDF:
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