Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/007381
Kind Code:
A1
Abstract:
A semiconductor structure and a method for forming same, and a memory. The semiconductor structure comprises: a substrate (210); and phase change storage units (300), located on the substrate (210). Each phase change storage unit (300) comprises a phase change material layer (310) and a heating layer (320), and the heating layer (320) is located between the phase change material layer (310) and the substrate (210); and the heating layer comprises a first part (321) made of a first conductive material and a second part (322) made of a second conductive material, and the first part (321) at least surrounds the side wall of the second part (322).
Inventors:
LIAO YU-CHENG (CN)
Application Number:
PCT/CN2022/108178
Publication Date:
January 11, 2024
Filing Date:
July 27, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L45/00
Foreign References:
| US20210242401A1 | 2021-08-05 | |||
| US8624215B2 | 2014-01-07 | |||
| US20130240820A1 | 2013-09-19 | |||
| US20110073829A1 | 2011-03-31 | |||
| CN112635667A | 2021-04-09 | |||
| CN101504967A | 2009-08-12 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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