Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2024/011767
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor structure and a method for forming same. The method for forming a semiconductor structure comprises the following steps: forming a substrate, the substrate comprising a base substrate and a gate structure located on the base substrate, and two sides of the gate structure being respectively provided with a first contact structure and a second contact structure, and a first trench located between the first contact structure and the second contact structure; in the first trench and on the first contact structure and the second contact structure, forming a sacrificial layer; forming an insulating cover layer on the sacrificial layer; and removing the sacrificial layer to form a first air gap structure in the first trench. The present disclosure reduces a parasitic capacitance effect between a first contact structure and a second contact structure located on two sides of a gate structure, and increases the controllability of formation of a first air gap structure.
Inventors:
KIM SUNGJIN (CN)
Application Number:
PCT/CN2022/124005
Publication Date:
January 18, 2024
Filing Date:
October 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768
Foreign References:
| CN107452712A | 2017-12-08 | |||
| CN107230658A | 2017-10-03 | |||
| CN113053884A | 2021-06-29 | |||
| JP2013229503A | 2013-11-07 | |||
| US20120037962A1 | 2012-02-16 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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