Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2024/051233
Kind Code:
A1
Abstract:
Disclosed are a semiconductor structure and a method for forming same. The method for forming the semiconductor structure comprises: providing a substrate and a stack structure, wherein the stack structure comprises a plurality of semiconductor layers arranged at intervals in a direction perpendicular to the surface of the substrate; forming a first sacrificial layer, a mask layer and a second sacrificial layer on the surface of each semiconductor layer in sequence; patterning the second sacrificial layer, the mask layer, the first sacrificial layer and the semiconductor layer to form a plurality of grooves extending in a first direction; removing the first sacrificial layer to form gaps; forming an initial word line layer; removing the second sacrificial layer to form etching holes; and removing part of the initial word line layer exposed by the etching holes to form a plurality of word line structures arranged at intervals in the direction perpendicular to the surface of the substrate.
Inventors:
LI XIAOJIE (CN)
Application Number:
PCT/CN2023/098682
Publication Date:
March 14, 2024
Filing Date:
June 06, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H10B12/00
Domestic Patent References:
| WO2022093660A1 | 2022-05-05 |
Foreign References:
| CN115312466A | 2022-11-08 | |||
| CN114927478A | 2022-08-19 | |||
| CN110047839A | 2019-07-23 | |||
| US20160086972A1 | 2016-03-24 | |||
| CN110767549A | 2020-02-07 | |||
| CN114023703A | 2022-02-08 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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