Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/165000
Kind Code:
A1
Abstract:
The present disclosure provides a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure comprises: a substrate having a first area and a second area; a first gate structure located in the first area and a second gate structure located in the second area, wherein the first gate structure is a high dielectric constant gate and comprises a first gate electrode layer and a high dielectric constant layer, and the second gate structure comprises a second gate electrode layer and an oxide insulating layer; an isolation layer and an interlayer dielectric layer that are located on the first gate structure and the second gate structure and cover a part of the second gate structure, the substrate and the first gate structure; and a second contact plunger penetrating through the isolation layer and the interlayer dielectric layer and in contact with the substrate, the second contact plunger being located in the second area and in lap joint with the second gate structure.
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Inventors:
SHEN YUTONG (CN)
TANG JIFENG (CN)
TANG JIFENG (CN)
Application Number:
PCT/CN2022/087965
Publication Date:
September 07, 2023
Filing Date:
April 20, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8238; H01L29/423
Foreign References:
| US20130119469A1 | 2013-05-16 | |||
| US20080099851A1 | 2008-05-01 | |||
| CN112103332A | 2020-12-18 | |||
| CN1469434A | 2004-01-21 | |||
| US6100569A | 2000-08-08 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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