Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/134100
Kind Code:
A1
Abstract:
Embodiments of the present disclosure disclose a semiconductor structure and a preparation method therefor. The semiconductor structure comprises: a substrate on which a gate structure is formed, a source region and a drain region being respectively formed in the substrate on two sides of the gate structure; and contacts located on the substrate, the contacts comprising a first contact located on the substrate and a second contact located at the side of the first contact away from the substrate, wherein the area of a bottom surface of the first contact is greater than the area of a top surface of the second contact.
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Inventors:
TANG JIFENG (CN)
Application Number:
PCT/CN2022/093898
Publication Date:
July 20, 2023
Filing Date:
May 19, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/48; H01L21/768
Foreign References:
| CN113113488A | 2021-07-13 | |||
| CN111987071A | 2020-11-24 | |||
| CN112151377A | 2020-12-29 | |||
| CN112786562A | 2021-05-11 | |||
| US20070246787A1 | 2007-10-25 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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