Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/279835
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a preparation method therefor. The preparation method for the semiconductor structure comprises: providing a substrate; forming a polysilicon layer on the substrate, the surface of the polysilicon layer away from the substrate having a native oxide layer; and nitriding the native oxide layer, such that the native oxide layer is nitrided to a silicon oxynitride layer. According to the present disclosure, the native oxide layer is nitrided to the silicon oxynitride layer by nitriding the native oxide layer. Because the etching rate of the silicon oxynitride layer is less than the etching rate of the native oxide layer, in the subsequent etching process, lateral etching of the silicon oxynitride layer can be avoided to ensure the integrity of patterns on the silicon oxynitride layer, thereby ensuring the accuracy of patterns formed by using the patterned silicon oxynitride layer as a mask, and improving the yield of semiconductor structures.
Inventors:
ZHU MENG (CN)
Application Number:
PCT/CN2022/091807
Publication Date:
January 12, 2023
Filing Date:
May 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/308
Foreign References:
| US5677234A | 1997-10-14 | |||
| CN113035699A | 2021-06-25 | |||
| US20100308382A1 | 2010-12-09 | |||
| TW350121B | 1999-01-11 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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