Title:
SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/023639
Kind Code:
A1
Abstract:
A semiconductor substrate for epitaxial growth that does not need any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe compound semiconductor substrate for epitaxial growth of HgCdTe film, within a given period of time (for example, 10 hours) after mirror finish treatment thereof, is accommodated in an inert gas atmosphere to thereby regulate the ratio of Te oxide based on the total amount of Te in the substrate surface as determined by XPS measurement so as to be 30% or below.
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Inventors:
SUZUKI KENJI (JP)
HIRANO RYUICHI (JP)
KURITA HIDEKI (JP)
HIRANO RYUICHI (JP)
KURITA HIDEKI (JP)
Application Number:
PCT/JP2007/066014
Publication Date:
February 28, 2008
Filing Date:
August 17, 2007
Export Citation:
Assignee:
NIPPON MINING CO (JP)
SUZUKI KENJI (JP)
HIRANO RYUICHI (JP)
KURITA HIDEKI (JP)
SUZUKI KENJI (JP)
HIRANO RYUICHI (JP)
KURITA HIDEKI (JP)
International Classes:
C30B29/48
Domestic Patent References:
| WO2005112106A1 | 2005-11-24 | |||
| WO2005112106A1 | 2005-11-24 |
Foreign References:
| JPS60215600A | 1985-10-28 | |||
| JPS62290135A | 1987-12-17 | |||
| JPS6321300A | 1988-01-28 | |||
| JPH06125148A | 1994-05-06 | |||
| JPH06345598A | 1994-12-20 | |||
| JPH02239188A | 1990-09-21 | |||
| JPH0692278A | 1994-04-05 |
Other References:
ERNE B.H. ET AL.: "Surface films on HgCdTe and CdTe etched in ferricyanide solution", APPLIED SURFACE SCIENCE, vol. 175-176, 15 May 2001 (2001-05-15), pages 579 - 584, XP003021219
Attorney, Agent or Firm:
ARAFUNE, Hiroshi (5F.Nikko Kagurazaka Bldg.,18, Iwatoch, Shinjuku-ku Tokyo 32, JP)
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