SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GAN CRYSTAL, SEMICONDUCTOR DEVICE, AND ELECTRONIC MACHINE

Title:

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GAN CRYSTAL, SEMICONDUCTOR DEVICE, AND ELECTRONIC MACHINE

Document Type and Number:

WIPO Patent Application WO/2022/220124

Kind Code:

A1

Abstract:

A semiconductor substrate according to the present invention is provided with a main substrate, a mask pattern that is positioned above the main substrate and includes a mask section, and adjacent first and second semiconductor sections that are positioned above the mask pattern. The first semiconductor section has a first lower edge positioned on the mask section and a first protruding part that projects further to the second semiconductor section side than the first lower edge.

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Inventors:

KOBAYASHI TOSHIHIRO (JP)
KAMIKAWA TAKESHI (JP)
AOKI YUTA (JP)
HAYASHI YUICHIRO (JP)

Application Number:

PCT/JP2022/016009

Publication Date:

October 20, 2022

Filing Date:

March 30, 2022

Export Citation:

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Assignee:

KYOCERA CORP (JP)

International Classes:

C30B29/38; C23C16/04; C23C16/34; C30B25/04; C30B33/08; H01L21/205; H01L33/20

Domestic Patent References:

WO2019191760A1

2019-10-03

Foreign References:

JP2013532621A

2013-08-19

Attorney, Agent or Firm:

HARAKENZO WORLD PATENT & TRADEMARK (JP)

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