SEMICONDUCTOR SUPER-JUNCTION POWER DEVICE AND MANUFACTURING METHOD THEREFOR

Title:

SEMICONDUCTOR SUPER-JUNCTION POWER DEVICE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2016/173394

Kind Code:

A1

Abstract:

The present application relates to the technical field of semiconductor power devices, and in particular to a semiconductor super-junction power device and a manufacturing method therefor. The super-junction power device comprises a terminal region and a cell region. The cell region comprises a drain region (200) in a substrate epitaxial layer (201), a JFET region (500) and a plurality of columnar epitaxial doping regions (202). A body region (203) is disposed at the top of each columnar epitaxial doping region (202) in the plurality of columnar epitaxial doping regions (202). The body regions (203) have two or more unequal widths. Source regions (206) are disposed in the body regions (203). Gate oxidation layers (204) are disposed on the body regions (203) and the JFET region (500). Gate electrodes (205) are disposed on the gate oxidation layers (204). The super-junction power device is of a body region structure with different widths, and the sudden gate-drain capacitance change speed can be reduced when the super-junction power device is turned on or off, thereby reducing the gate voltage oscillation caused by a sudden gate-drain capacitance change.

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Inventors:

LIU LEI (CN)
YUAN YUANLIN (CN)
WANG PENGFEI (CN)
LIU WEI (CN)
GONG YI (CN)

Application Number:

PCT/CN2016/078831

Publication Date:

November 03, 2016

Filing Date:

April 08, 2016

Export Citation:

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Assignee:

SU ZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)

International Classes:

H01L29/78; H01L21/28; H01L29/06; H01L29/423; H01L29/66

Foreign References:

CN104952928A	2015-09-30
CN102169902A	2011-08-31
CN102969356A	2013-03-13
US20120068298A1	2012-03-22
JP2012174949A	2012-09-10

Attorney, Agent or Firm:

NANJING JINGWEI PATENT & TRADEMARK AGENCY CO.,LTD (CN)
南京经纬专利商标代理有限公司 (CN)

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