SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2016/166949

A1

A semiconductor wafer is provided with a substrate and a group III nitride semiconductor layer provided on the substrate with a multilayer buffer layer interposed therebetween. The multilayer buffer layer includes at least a first buffer layer and a second buffer layer. The first buffer layer is in contact with the group III nitride semiconductor layer. The second buffer layer is in contact with the first buffer layer, and has a different composition from the first buffer layer. The average lattice constant of the multilayer buffer layer is lower than that of the group III nitride semiconductor layer, and the interface lattice distortion of the group III nitride semiconductor layer at the interface between the group III nitride semiconductor layer and the first buffer layer is lower than the interface lattice distortion of the first buffer layer at the interface between the first buffer layer and the second buffer layer.

JP2701767	VAPOR PHASE GROWTH SYSTEM
WO/2012/120787	SUSCEPTOR AND METHOD FOR PRODUCING EPITAXIAL WAFER USING SAME
JPS5829615	[Title of the Invention] To Te A Do Do Tha A Tha A Tha A A A

IGUCHI HIROKO (JP)
NARITA TETSUO (JP)
ITOH KENJI (JP)
KONDO KAYO (JP)
OTAKE NOBUYUKI (JP)
HOSHI SHINICHI (JP)

PCT/JP2016/001896

October 20, 2016

April 04, 2016

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DENSO CORP (JP)

H01L21/205; H01L21/20; H01L21/338; H01L29/778; H01L29/812; H01L29/872

WO2013108733A1

2013-07-25

JP2014192226A	2014-10-06
JP2013021124A	2013-01-31
JP2007067077A	2007-03-15

KIN, Junhi (JP)
Gold Junki (JP)

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