Title:
SEMITRANSMITTING FILM, PHOTOMASK BLANK, PHOTOMASK, AND SEMITRANSMITTING FILM DESIGNING METHOD
Document Type and Number:
WIPO Patent Application WO/2005/124454
Kind Code:
A1
Abstract:
A semitransmitting film having a desired transmittance, an amount of phase shift of approximate zero, and a relative small thickness, a novel phase shift mask using this semitransmitting film, a photomask blank used for manufacturing the phase shift mask, and a method for designing the semitransmitting film. A semitransmitting film transmitting a part of light of a desired wavelength &lgr and formed on a translucent base has at least one phase difference reducing layer having the following function. The phase difference reducing layer has a refractive index n and a thickness d satisfying the relation 00=(360/&lgr )x(n-1)xd (hereinafter referred to as phase difference &Dgr Ѳ0 (unit:degree) which is calculated from the difference between the optical distances of the layer transmitted light and layer reference light.
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Inventors:
SHIOTA YUKI (JP)
NOZAWA OSAMU (JP)
NOZAWA OSAMU (JP)
Application Number:
PCT/JP2005/010713
Publication Date:
December 29, 2005
Filing Date:
June 10, 2005
Export Citation:
Assignee:
HOYA CORP (JP)
SHIOTA YUKI (JP)
NOZAWA OSAMU (JP)
SHIOTA YUKI (JP)
NOZAWA OSAMU (JP)
International Classes:
G03F1/26; G03F1/29; G03F1/32; G03F1/34; G03F1/50; G03F1/54; G03F1/68; G03F1/80; H01L21/027; (IPC1-7): G03F1/08; G03F7/20; H01L21/027
Foreign References:
| JP2003050454A | 2003-02-21 | |||
| JP2001092106A | 2001-04-06 | |||
| JPH08202016A | 1996-08-09 | |||
| JPH07239546A | 1995-09-12 | |||
| JPH0728224A | 1995-01-31 | |||
| JP2003021891A | 2003-01-24 | |||
| EP1365288A1 | 2003-11-26 | |||
| US20030180630A1 | 2003-09-25 | |||
| EP1252292A2 | 2002-10-30 | |||
| JP2004085760A | 2004-03-18 |
Other References:
See also references of EP 1783546A4
Attorney, Agent or Firm:
Aniya, Setuo (4-6-1 Iidabash, Chiyoda-ku Tokyo 72, JP)
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