Title:
SEPARATION TYPE UNIT PIXEL OF IMAGE SENSOR HAVING THREE-DIMENSIONAL STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2014/051306
Kind Code:
A1
Abstract:
The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional structure for maximizing the efficiency of transmitting a charge generated in a photodiode to a floating diffusion region. The separation type unit pixel of an image sensor having a three-dimensional structure comprises a first wafer having a photodiode and a transmission transistor formed thereon, and a second wafer having a reset transistor and a source follower transistor formed thereon. In particular, N_ground voltage, which has a voltage level lower than the ground voltage used for the second wafer, is applied to the positive region of the photodiode.
Inventors:
UHM JAE WON (KR)
Application Number:
PCT/KR2013/008527
Publication Date:
April 03, 2014
Filing Date:
September 24, 2013
Export Citation:
Assignee:
SILICONFILE TECHNOLOGIES INC (KR)
International Classes:
H01L27/146; H04N5/357; H04N5/369
Foreign References:
| KR20070120456A | 2007-12-24 | |||
| KR20070000578A | 2007-01-03 |
Attorney, Agent or Firm:
LEE, CHEOL HEE (KR)
이철희 (KR)
이철희 (KR)
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