Title:
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/003668
Kind Code:
A1
Abstract:
Provided is a SiC epitaxial wafer comprising: a 4H-SiC single crystal substrate of which the main surface is a surface having an off angle with respect to the c-plane, and which has a bevel portion at the circumferential portion thereof; and a SiC epitaxial layer which is formed on the 4H-SiC single crystal substrate and has a thickness of at least 20 μm, wherein the density of interface dislocations extending from the outer circumferential edge of the SiC epitaxial layer is 10 cm-1 or less.
Inventors:
KAMEI KOJI (JP)
Application Number:
PCT/JP2018/018498
Publication Date:
January 03, 2019
Filing Date:
May 14, 2018
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/205; C23C16/42; C30B25/20; C30B29/36
Foreign References:
| JP2014231457A | 2014-12-11 | |||
| JP2017108026A | 2017-06-15 | |||
| JP2018108916A | 2018-07-12 |
Other References:
ZHANG, N. ET AL.: "Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide", APPLIED PHYSICS LETTERS, vol. 94, no. 12, 2009, pages 122108 - 1-122108-3, XP012118497
Attorney, Agent or Firm:
OIKAWA Shu et al. (JP)
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