Title:
SiC MONOCRYSTAL AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/045716
Kind Code:
A1
Abstract:
Provided is an SiC monocrystal that has a large grown thickness and does not contain inclusions. The SiC monocrystal, which has been grown by means of a solution method, is such that the total length (M) of the {1-100} plane in the {0001} growth plane of the SiC monocrystal and the length (P) of the outer periphery of the growth plane of the SiC monocrystal satisfy the relationship M/P ≤ 0.70, and the length in the growth direction of the SiC monocrystal is at least 2 mm.
Inventors:
DAIKOKU HIRONORI (JP)
KADO MOTOHISA (JP)
KAMEI KAZUHITO (JP)
KUSUNOKI KAZUHIKO (JP)
KADO MOTOHISA (JP)
KAMEI KAZUHITO (JP)
KUSUNOKI KAZUHIKO (JP)
Application Number:
PCT/JP2014/072493
Publication Date:
April 02, 2015
Filing Date:
August 27, 2014
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
NIPPON STEEL & SUMITOMO METAL CORP (JP)
NIPPON STEEL & SUMITOMO METAL CORP (JP)
International Classes:
C30B29/36; C30B19/10
Domestic Patent References:
| WO2012127703A1 | 2012-09-27 |
Foreign References:
| JP2013147397A | 2013-08-01 | |||
| JP2010208926A | 2010-09-24 | |||
| JP2013147397A | 2013-08-01 |
Other References:
See also references of EP 3051009A4
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
Aoki 篤 (JP)
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