Title:
SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/157418
Kind Code:
A1
Abstract:
An objective of the present invention is to provide a high-quality SiC single crystal in which the threading dislocation density including screw dislocation, edge dislocation and micropipe defect is reduced, and a method for producing such SiC single crystal according to a solution technique. The method for producing the SiC single crystal according to a solution technique which involves bringing an SiC seed crystal into contact with an Si-C solution having a temperature gradient in which the temperature is lower towards the surface from the inner part and growing an SiC single crystal comprises setting the temperature gradient of the surface region of the Si-C solution to 10°C/cm or below, bringing the (1-100) face of an SiC seed crystal into contact with the Si-C solution, and growing an SiC single crystal on the (1-100) face of the seed crystal at a ratio (single crystal growth rate/temperature gradient) of the growth rate of the SiC single crystal to the temperature gradient which is less than 20×10-4 cm2/h·°C.
Inventors:
DANNO KATSUNORI (JP)
Application Number:
PCT/JP2013/060515
Publication Date:
October 24, 2013
Filing Date:
April 05, 2013
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
DANNO KATSUNORI (JP)
DANNO KATSUNORI (JP)
International Classes:
C30B29/36; C30B19/10
Foreign References:
| JPH05262599A | 1993-10-12 | |||
| JPH10509943A | 1998-09-29 | |||
| JP2003119097A | 2003-04-23 | |||
| JP2007197231A | 2007-08-09 |
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
Aoki 篤 (JP)
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