Title:
SIC PRECURSOR COMPOUND AND THIN FILM FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/172619
Kind Code:
A1
Abstract:
The present invention relates to a SiC precursor for performing SiOCN thin film deposition and a SiOCN thin film forming method using same. The forming method for a silicon-containing thin film according to the present invention is performed through a low-temperature process requiring no separate catalysts and shows an excellent thin film deposition rate and process efficiency.
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Inventors:
KIM JA YEON (KR)
KIM HYOUNG NAM (KR)
PARK SEUNG BAE (KR)
YOON SANG WOONG (KR)
LEE SOO JIN (KR)
KIM HYOUNG NAM (KR)
PARK SEUNG BAE (KR)
YOON SANG WOONG (KR)
LEE SOO JIN (KR)
Application Number:
PCT/KR2019/002540
Publication Date:
September 12, 2019
Filing Date:
March 05, 2019
Export Citation:
Assignee:
DUKSAN TECHOPIA CO LTD (KR)
International Classes:
C07F7/10; C23C16/36; C23C16/40; C23C16/44; C23C16/455
Foreign References:
| KR20120131114A | 2012-12-04 | |||
| KR20170053371A | 2017-05-16 | |||
| KR20120078909A | 2012-07-11 | |||
| KR20150121217A | 2015-10-28 |
Other References:
RANDALL, E. W. ET AL.: "Proton Magnetic Resonance and Basicity Studies of Linear and Cyclic gent-Diamine Derivatives of Elements in Group IV", INORGANIC CHEMISTRY, vol. 6, no. 4, April 1967 (1967-04-01), pages 744 - 749, XP055636763
Attorney, Agent or Firm:
KIM, Jeongeun (KR)
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