Title:
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2011/040240
Kind Code:
A1
Abstract:
Disclosed is a method for producing an SiC single crystal, wherein an SiC single crystal, in particular a 4H-SiC single crystal is stably grown at an effective crystal growth rate for a long time even in a low temperature range of 2000˚C or less. Specifically, an SiC single crystal is produced as follows: a staring material containing Si, Ti and Ni is firstly introduced into a crucible (1), which is formed of graphite, so as to form a solvent by being heated and melted therein, and C is dissolved into the solvent from the crucible (1) so as to form a melt (6); and then, an SiC seed crystal substrate (8) is brought into contact with the melt (6) and the melt (6) is converted into a super saturation state of SiC in the vicinity of the surface of the SiC seed crystal substrate (8), so that an SiC single crystal is grown on the SiC seed crystal substrate (8).
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Inventors:
RYO MINA (JP)
YONEZAWA YOSHIYUKI (JP)
SUZUKI TAKESHI (JP)
YONEZAWA YOSHIYUKI (JP)
SUZUKI TAKESHI (JP)
Application Number:
PCT/JP2010/065913
Publication Date:
April 07, 2011
Filing Date:
September 15, 2010
Export Citation:
Assignee:
FUJI ELECTRIC HOLDINGS (JP)
RYO MINA (JP)
YONEZAWA YOSHIYUKI (JP)
SUZUKI TAKESHI (JP)
RYO MINA (JP)
YONEZAWA YOSHIYUKI (JP)
SUZUKI TAKESHI (JP)
International Classes:
C30B29/36; C30B19/04
Foreign References:
| JP2002356397A | 2002-12-13 | |||
| JP2000264790A | 2000-09-26 | |||
| JP2010184849A | 2010-08-26 | |||
| JP2009167045A | 2009-07-30 | |||
| JP2009274894A | 2009-11-26 | |||
| JP2009091222A | 2009-04-30 | |||
| JP2004002173A | 2004-01-08 | |||
| JP2007261843A | 2007-10-11 | |||
| JP2007076986A | 2007-03-29 |
Other References:
See also references of EP 2484815A4
Attorney, Agent or Firm:
OKUYAMA, Shoichi et al. (JP)
Okuyama In addition, it is 1. (JP)
Okuyama In addition, it is 1. (JP)
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