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Title:
SIC SUBSTRATE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2017/017858
Kind Code:
A1
Abstract:
Provided is a production method for producing a SiC substrate having a smoothened surface, the production method comprising a stage for, in a state where an SiC substrate having an off-angle is heated, etching the surface of the SiC substrate by irradiating the surface of the SiC substrate with atomic hydrogen. At the stage for etching, the SiC substrate may be heated at a range of 800-1200°C.

Inventors:
FUJII TAKESHI (JP)
SATO MARIKO (JP)
INAMOTO TAKURO (JP)
Application Number:
PCT/JP2015/071723
Publication Date:
February 02, 2017
Filing Date:
July 30, 2015
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/302; H01L21/205; H01L21/268; H01L21/324; H01L21/336; H01L29/12; H01L29/78
Foreign References:
JP2003234301A2003-08-22
JP2005317670A2005-11-10
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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