Title:
SILICON CARBIDE DEVICE HAVING CRIMPING STRUCTURE AND MANUFACTURING METHOD FOR SILICON CARBIDE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/206594
Kind Code:
A1
Abstract:
A silicon carbide device having a crimping structure and a manufacturing method for the silicon carbide device. The silicon carbide device having the crimping structure comprises a tube base, transition sheets, silicon carbide chips, connecting bridges, an insulating block, a buffer sheet, and a tube cap; the tube cap is mounted on the upper portion of the tube base; the tube base comprises a lower pressing block, a sealing ring, a ceramic ring, a heat dissipation ring, and a base flange which are sequentially connected; the insulating block is mounted inside the tube base; the buffer sheet is fixed between the tube cap and the insulating block; the silicon carbide chips are mounted on the inner side of the heat dissipation ring by means of the transition sheets, the connecting bridges are mounted on the silicon carbide chips, and the connecting bridges are connected to the lower pressing block. Current-sharing parallel connection of a plurality of silicon carbide chips is achieved by means of the polygonal structure layout of the heat dissipation ring, three-dimensional cooling is achieved by means of a heat dissipation structure consisting of the heat dissipation ring, the connecting bridges, the upper pressing block, the lower pressing block, and the buffer sheet, and the through-current capability of the device is improved; the silicon carbide chips are interconnected by means of a nano-silver low-temperature sintering process, and compared with existing silicon-based devices, the silicon carbide device can work at higher frequency and higher temperature and can satisfy the working environment requirement of 200°C-300°C.
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Inventors:
ZHAO YAN (CN)
Application Number:
PCT/CN2022/091330
Publication Date:
November 02, 2023
Filing Date:
May 07, 2022
Export Citation:
Assignee:
ZHAO YAN (CN)
International Classes:
H01L23/10; H01L23/367
Foreign References:
| CN214898395U | 2021-11-26 | |||
| CN110379862A | 2019-10-25 | |||
| CN210073809U | 2020-02-14 | |||
| CN107887368A | 2018-04-06 | |||
| US20210217681A1 | 2021-07-15 |
Attorney, Agent or Firm:
DALIAN YOULU INTELLECTUAL RIGHT PATENT AGENCY (GENERAL PARTNERSHIP) (CN)
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