Title:
SILICON-CARBIDE SEMICONDUCTOR APPARATUS
Document Type and Number:
WIPO Patent Application WO/2018/088063
Kind Code:
A1
Abstract:
According to the present invention, at least one gate trench defined by side surfaces and a bottom surface is provided to an active region. A terminal region includes a second impurity region that surrounds the active region. Each of the side surfaces has a first outer end surface that faces the inner end surface of the second impurity region. The bottom surface has: a first bottom part that is connected to the first outer end surface; and a second bottom part that is located on a side opposed to an inner end surface with respect to the first bottom part and that is connected to the first bottom part. A silicon-carbide substrate has a first region and a second region that are separated from each other with a drift region interposed therebetween and that are positioned between the at least one gate trench and a second principal surface. A gap between the first region and the second region that are positioned between the first bottom part and the second principal surface is smaller than that between a first region and a second region that are positioned between the second bottom part and the second principal surface, in a direction parallel to the first outer end surface.
Inventors:
UCHIDA KOSUKE (JP)
HIYOSHI TORU (JP)
HIYOSHI TORU (JP)
Application Number:
PCT/JP2017/035921
Publication Date:
May 17, 2018
Filing Date:
October 03, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12
Domestic Patent References:
| WO2016042738A1 | 2016-03-24 | |||
| WO2013187017A1 | 2013-12-19 | |||
| WO2015015808A1 | 2015-02-05 |
Foreign References:
| JP2006032420A | 2006-02-02 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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