SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2015/015926

A1

This silicon-carbide semiconductor device has a silicon-carbide layer (10) and a gate-insulating layer (15). The silicon-carbide layer (10) has a principal surface (10a). The gate-insulating layer (15) is laid out so as to contact the principal surface (10a) of the silicon-carbide layer (10). The silicon-carbide layer (10) contains a drift region (17) that has a first conductivity type, body regions (13) that contact said drift region (17) and have a second conductivity type that is different from the first conductivity type, source regions (14) that have the first conductivity type and are laid out so as to be separated from the drift region (17) by the body regions (13), and protruding regions (2) that contact the gate-insulating layer (15), have the first conductivity type, and are laid out so as to protrude into the body region (13) from the source regions (14) and/or the drift region (17). A silicon-carbide semiconductor device and a manufacturing method therefor that make it possible to improve the threshold voltage of said silicon-carbide semiconductor device while minimizing increases in characteristic on-resistance are thus provided.

MASUDA TAKEYOSHI (JP)
HORII TAKU (JP)
KUBOTA RYOSUKE (JP)

PCT/JP2014/065775

February 05, 2015

June 13, 2014

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SUMITOMO ELECTRIC INDUSTRIES (JP)

H01L29/78; H01L21/336; H01L29/12

JP2006303323A	2006-11-02
JP2006066438A	2006-03-09
JP2012124536A	2012-06-28
JP2012235001A	2012-11-29

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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