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Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2010/134344
Kind Code:
A1
Abstract:
Disclosed are a silicon carbide semiconductor device wherein the resistance of an ohmic contact can be reduced without being accompanied by a process failure, and a method for manufacturing the silicon carbide semiconductor device. Specifically disclosed is a MOSFET composed of a silicon carbide semiconductor, which comprises a p-type contact region (15) that is formed in an SiC epitaxial layer (12) and forms an ohmic contact with a source electrode (20). The p-type contact region (15) has an impurity concentration of not more than 1e20 cm-3 within the region from the surface of the SiC epitaxial layer (12) to the depth of 50 nm, and is provided with a high concentration region (15a) having an impurity concentration of not less than 1e20 cm-3 at a position of 50 nm or more from the surface. The source electrode (20) is formed within an opening that reaches the high concentration region (15a).

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Inventors:
WATANABE TOMOKATSU (JP)
MIURA NARUHISA (JP)
NAKAO YUKIYASU (JP)
TANIOKA TOSHIKAZU (JP)
FURUHASHI MASAYUKI (JP)
HINO SHIRO (JP)
IMAIZUMI MASAYUKI (JP)
Application Number:
PCT/JP2010/003389
Publication Date:
November 25, 2010
Filing Date:
May 20, 2010
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
WATANABE TOMOKATSU (JP)
MIURA NARUHISA (JP)
NAKAO YUKIYASU (JP)
TANIOKA TOSHIKAZU (JP)
FURUHASHI MASAYUKI (JP)
HINO SHIRO (JP)
IMAIZUMI MASAYUKI (JP)
International Classes:
H01L21/28; H01L21/329; H01L21/336; H01L29/12; H01L29/739; H01L29/78; H01L29/861
Foreign References:
JP2003168653A2003-06-13
JP2009049198A2009-03-05
JP2009182271A2009-08-13
JP2009266871A2009-11-12
Attorney, Agent or Firm:
TAKAHASHI, Shogo et al. (JP)
Shogo Takahashi (JP)
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