Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2014/049806
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a silicon carbide semiconductor device having high repeatability and a high withstand voltage. In order to achieve the purpose, in multi-formed field limiting rings, the distance between the rings is gradually reduced toward a corner portion from a line portion, and the impurity concentration of a low-concentration region that sandwiches a high-concentration region at the center of a line is reduced toward the corner portion from the line portion.
Inventors:
MATSUSHIMA HIROYUKI (JP)
TEGA NAOKI (JP)
TSUCHIYA RYUTA (JP)
HISAMOTO DIGH (JP)
TEGA NAOKI (JP)
TSUCHIYA RYUTA (JP)
HISAMOTO DIGH (JP)
Application Number:
PCT/JP2012/075004
Publication Date:
April 03, 2014
Filing Date:
September 28, 2012
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L21/336; H01L29/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2007091360A1 | 2007-08-16 |
Foreign References:
| JPH06244405A | 1994-09-02 | |||
| JPH0799328A | 1995-04-11 | |||
| JP2012064796A | 2012-03-29 | |||
| JPH08288524A | 1996-11-01 |
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
Manabu Inoue (JP)
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