Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/068475
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device provided with a silicon carbide substrate (10), a gate insulation film (15), and a gate electrode (27). The silicon carbide substrate (10) has a first main surface (10a) and a second main surface (10b) on the side opposite the first main surface (10a). The gate insulation film (15) is provided so as to be in contact with the first main surface (10a) of the silicon carbide substrate (10) The gate electrode (27) is provided on the gate insulation film (15) so that the gate insulation film (15) is interposed between the gate electrode (27) and the silicon carbide substrate (10). With regards to performing a first stress test in which a gate voltage of -5 V is applied for 100 hours to the gate electrode (27) under a temperature of 175ºC, when the threshold voltage prior to performing the first stress test is taken as a first threshold voltage and the threshold voltage after performing the first stress test is taken as a second threshold voltage, the absolute value of the difference between the first threshold voltage and the second threshold voltage is equal to or less than 0.5 V. A silicon carbide semiconductor device in which fluctuations in the threshold voltage can be reduced, and a method for manufacturing the silicon carbide semiconductor device, are thereby provided.
Inventors:
KUBOTA RYOSUKE (JP)
YAMADA SHUNSUKE (JP)
HORII TAKU (JP)
MASUDA TAKEYOSHI (JP)
HAMAJIMA DAISUKE (JP)
TANAKA SO (JP)
KIMURA SHINJI (JP)
KOBAYASHI MASAYUKI (JP)
YAMADA SHUNSUKE (JP)
HORII TAKU (JP)
MASUDA TAKEYOSHI (JP)
HAMAJIMA DAISUKE (JP)
TANAKA SO (JP)
KIMURA SHINJI (JP)
KOBAYASHI MASAYUKI (JP)
Application Number:
PCT/JP2014/074710
Publication Date:
May 14, 2015
Filing Date:
September 18, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
RENESAS ELECTRONICS CORP (JP)
RENESAS ELECTRONICS CORP (JP)
International Classes:
H01L21/336; H01L21/28; H01L21/66; H01L29/12; H01L29/423; H01L29/49; H01L29/78
Foreign References:
| JP2013175593A | 2013-09-05 | |||
| JP2011199060A | 2011-10-06 | |||
| JP2006222210A | 2006-08-24 | |||
| JPH11330090A | 1999-11-30 | |||
| JP2007287992A | 2007-11-01 | |||
| JP2010502031A | 2010-01-21 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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