Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/016171
Kind Code:
A1
Abstract:
A technology disclosed in the present description relates to a technology of suppressing dielectric breakdown in the off-state of a silicon carbide semiconductor device without deteriorating process throughput or yield. A silicon carbide semiconductor device relating to the technology disclosed in the present description is provided with: a first conductivity-type drift layer (2); a threading dislocation (TD) formed by penetrating the drift layer (2); and a second conductivity-type electric field mitigation region (12), that is provided as a part of the surface layer of the drift layer (2), said second conductivity-type electric field mitigation region being provided at a position corresponding to the threading dislocation (TD). The electric field mitigation region (12) is an epitaxial layer.
Inventors:
WATANABE TOMOKATSU (JP)
HINO SHIRO (JP)
YAMASHIRO YUSUKE (JP)
IWAMATSU TOSHIAKI (JP)
HINO SHIRO (JP)
YAMASHIRO YUSUKE (JP)
IWAMATSU TOSHIAKI (JP)
Application Number:
PCT/JP2017/019209
Publication Date:
January 25, 2018
Filing Date:
May 23, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/20; H01L21/265; H01L21/336; H01L29/12; H01L29/872
Foreign References:
| JP2013254826A | 2013-12-19 | |||
| JP2012199384A | 2012-10-18 | |||
| JP2009147246A | 2009-07-02 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Download PDF:
Previous Patent: DETECTION DEVICE AND METHOD FOR CONTROLLING DETECTION DEVICE
Next Patent: VEHICLE CHASSIS FRAME STRUCTURE
Next Patent: VEHICLE CHASSIS FRAME STRUCTURE