Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/183301
Kind Code:
A1
Abstract:
According to the present invention, a silicon carbide substrate comprises: a first impurity region; a second impurity region that is in contact with the first impurity region and has p-type conductivity; a third impurity region that is on the first impurity region and the second impurity region and has n-type conductivity; a body region; and a source region. According to the present invention, a gate insulating film has: a lateral surface that is in contact with the source region, the body region and the third impurity region; and a bottom surface that is in contact with the third impurity region. The second impurity region includes the bottom surface when viewed from the direction perpendicular to the main surface; and the area of the second impurity region is larger than the area of the bottom surface but three times or less the area of the bottom surface. The impurity concentration of the second impurity region is more than 1 × 1019 cm-3 but 1 × 1021 cm-3 or less.
Inventors:
SAKAI MITSUHIKO (JP)
HIYOSHI TORU (JP)
TANAKA SO (JP)
HIYOSHI TORU (JP)
TANAKA SO (JP)
Application Number:
PCT/JP2017/007296
Publication Date:
October 26, 2017
Filing Date:
February 27, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L29/12; H01L29/47; H01L29/872
Domestic Patent References:
| WO2016002769A1 | 2016-01-07 |
Foreign References:
| JP2014183274A | 2014-09-29 | |||
| JP2008235546A | 2008-10-02 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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