Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/259409
Kind Code:
A1
Abstract:
The present disclosure relates to a silicon carbide semiconductor device, and comprises: a semiconductor layer of a first electrically conductive type on a first main surface of a silicon carbide substrate; a striped first well region of a second electrically conductive type provided on the upper layer part of the semiconductor layer; a first impurity region of the first electrically conductive type provided on the upper layer part of the first well region; a first well contact region of the second electrically conductive type provided on the upper layer part of the first well region and joined to the first impurity region at the side surface; a first contact that is electrically connected to the first impurity region and the first well contact region, and that is electrically connected to a first main electrode provided above the semiconductor layer; a striped second well region provide separated from the first well region; a second well contact region of the second electrically conductive type provided on the upper layer part of the second well region; a second contact that is electrically connected to the second well contact region and that is electrically connected to the first main electrode provided above the semiconductor layer; and a second main electrode on a second main surface of the silicon carbide substrate.
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Inventors:
TOMINAGA TAKAAKI (JP)
Application Number:
PCT/JP2021/021890
Publication Date:
December 15, 2022
Filing Date:
June 09, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/12
Domestic Patent References:
| WO2020026401A1 | 2020-02-06 |
Foreign References:
| US20200176442A1 | 2020-06-04 | |||
| JP2005101551A | 2005-04-14 | |||
| JP2017055145A | 2017-03-16 | |||
| JP2017168561A | 2017-09-21 | |||
| JP2015115337A | 2015-06-22 | |||
| JP2019012803A | 2019-01-24 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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