Title:
SILICON CARBIDE SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT
Document Type and Number:
WIPO Patent Application WO/2016/051485
Kind Code:
A1
Abstract:
Provided is a SiC single crystal wafer fabricated from a SiC single crystal ingot grown by a sublimation recrystallization method, the SiC single crystal wafer achieving a high device performance and high yields in device fabrication when used as a device fabrication wafer. The SiC single crystal wafer has a basal plane dislocation density of a surface of 1000/cm2 or less, a threading screw dislocation density of 500/cm2 or less, and a Raman shift value of 0.2 or less. Also provided is a method for producing a SiC single crystal ingot by controlling heat input from the side surface of a single crystal ingot during single crystal growth and growing crystals while reducing change in temperature distribution of the single crystal ingot.
Inventors:
NAKABAYASHI MASASHI (JP)
SHIMOMURA KOTA (JP)
NAGAHATA YUKIO (JP)
KOJIMA KIYOSHI (JP)
SHIMOMURA KOTA (JP)
NAGAHATA YUKIO (JP)
KOJIMA KIYOSHI (JP)
Application Number:
PCT/JP2014/076014
Publication Date:
April 07, 2016
Filing Date:
September 30, 2014
Export Citation:
Assignee:
NIPPON STEEL & SUMIKIN MAT CO (JP)
International Classes:
C30B29/36; C30B23/06
Domestic Patent References:
| WO2010041497A1 | 2010-04-15 | |||
| WO2013081164A1 | 2013-06-06 | |||
| WO2013157418A1 | 2013-10-24 |
Foreign References:
| JP2013047159A | 2013-03-07 | |||
| JP2014002104A | 2014-01-09 | |||
| JP2002284599A | 2002-10-03 | |||
| JP2007119273A | 2007-05-17 | |||
| JP2001294499A | 2001-10-23 | |||
| JP2013139347A | 2013-07-18 | |||
| JP2006290705A | 2006-10-26 | |||
| JP2005093519A | 2005-04-07 |
Other References:
See also references of EP 3026147A4
YU. M. TAIROV; V. F. TSVETKOV, JOURNAL OF CRYSTAL GROWTH, vol. 52, 1981, pages 146 - 150
A. A. BURK ET AL., MATER. SCI. FORUM, vol. 717-720, 2012, pages 75 - 80
NOBORU OHTANI, PROCEEDINGS OF 17TH MEETING ON SIC AND RELATED WIDE BANDGAP SEMICONDUCTORS, 2008, pages 8
J. SENZAKI ET AL., MATER. SCI. FORUM, vol. 661, 2005, pages 661 - 664
R. E. STAHLBUSH ET AL., JOURNAL OF ELECTRONIC MATERIALS, vol. 31, 2002, pages 370 - 375
BANDO ET AL., PROCEEDINGS OF 19TH MEETING ON SIC AND RELATED WIDE BANDGAP SEMICONDUCTORS, 2010, pages 140 - 141
YAMAMOTO ET AL., PROCEEDINGS OF 19TH MEETING ON SIC AND RELATED WIDE BANDGAP SEMICONDUCTORS, 2010, pages 11 - 12
S. HA ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 244, 2002, pages 257 - 266
K. KAMEI ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 311, 2009, pages 855 - 858
N. OHTANI ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 286, 2006, pages 55 - 60
TAKAHASHI, J. ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 135, 1994, pages 61 - 70
YU. M. TAIROV; V. F. TSVETKOV, JOURNAL OF CRYSTAL GROWTH, vol. 52, 1981, pages 146 - 150
A. A. BURK ET AL., MATER. SCI. FORUM, vol. 717-720, 2012, pages 75 - 80
NOBORU OHTANI, PROCEEDINGS OF 17TH MEETING ON SIC AND RELATED WIDE BANDGAP SEMICONDUCTORS, 2008, pages 8
J. SENZAKI ET AL., MATER. SCI. FORUM, vol. 661, 2005, pages 661 - 664
R. E. STAHLBUSH ET AL., JOURNAL OF ELECTRONIC MATERIALS, vol. 31, 2002, pages 370 - 375
BANDO ET AL., PROCEEDINGS OF 19TH MEETING ON SIC AND RELATED WIDE BANDGAP SEMICONDUCTORS, 2010, pages 140 - 141
YAMAMOTO ET AL., PROCEEDINGS OF 19TH MEETING ON SIC AND RELATED WIDE BANDGAP SEMICONDUCTORS, 2010, pages 11 - 12
S. HA ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 244, 2002, pages 257 - 266
K. KAMEI ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 311, 2009, pages 855 - 858
N. OHTANI ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 286, 2006, pages 55 - 60
TAKAHASHI, J. ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 135, 1994, pages 61 - 70
Attorney, Agent or Firm:
SASAKI Kazuya et al. (JP)
Kazuya Sasaki (JP)
Kazuya Sasaki (JP)
Download PDF:
Previous Patent: NON-CONTACT POWER FEEDING DEVICE
Next Patent: ULTRASONIC VIBRATOR AND ULTRASONIC MEDICAL APPARATUS
Next Patent: ULTRASONIC VIBRATOR AND ULTRASONIC MEDICAL APPARATUS