SILICON NITRIDE SUBSTRATE MANUFACTURING METHOD, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE, AND SEMICONDUCTOR MODULE

Title:

SILICON NITRIDE SUBSTRATE MANUFACTURING METHOD, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE, AND SEMICONDUCTOR MODULE

Document Type and Number:

WIPO Patent Application WO/2010/082478

Kind Code:

A1

Abstract:

Provided is a manufacturing method with which a high thermal conductivity silicon nitride substrate having excellent sintering performance can be manufactured without the occurrence of a molding crack or degreasing crack, as well as to provide a silicon nitride substrate, and a silicon nitride circuit substrate and a semiconductor module using said silicon nitride substrate. With this silicon nitride substrate manufacturing method, a slurry is manufactured by mixing a silicon nitride powder, a sintering additive powder, and a binder in an organic solvent which is a dispersion medium, and said slurry is formed into a sheet, after which degreasing and sintering are performed. In addition, with this silicon nitride substrate manufacturing method, the oxygen content is 2.0 mass% or less and the specific surface area is 3-11 m2/g for the aforementioned silicon nitride powder, the additive rate for the aforementioned sintering additive powder is 4-15 mol%, and the water content ratio of the aforementioned organic solvent is 0.03-3 mass%.

Inventors:

KAGA YOUICHIROU (JP)
IMAMURA HISAYUKI (JP)
WATANABE JUNICHI (JP)

Application Number:

PCT/JP2010/000136

Publication Date:

July 22, 2010

Filing Date:

January 13, 2010

Export Citation:

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Assignee:

HITACHI METALS LTD (JP)
KAGA YOUICHIROU (JP)
IMAMURA HISAYUKI (JP)
WATANABE JUNICHI (JP)

International Classes:

C04B35/622; C04B35/584; H01L23/12; H05K1/03

Foreign References:

JP2002029851A	2002-01-29
JP2008127226A	2008-06-05
JPH01203269A	1989-08-16
JPH05294707A	1993-11-09
JP2002097005A	2002-04-02

Other References: