Title:
SILICON SINGLE CRYSTAL PULLING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/207942
Kind Code:
A1
Abstract:
A silicon single crystal pulling method which involves a step of arranging a molded article between the inner surface of a susceptor that holds a silica glass crucible and the outer surface of the crucible, wherein the molded article is so formed that the center axis of the susceptor can substantially agree with the center axis of the crucible when the molded article is arranged between the inner surface of the susceptor and the outer surface of the crucible on the basis of three-dimensional data on the shape of the inner surface of the susceptor and three-dimensional data on the crucible.
Inventors:
SUDO TOSHIAKI (JP)
SATO TADAHIRO (JP)
KITAHARA KEN (JP)
KITAHARA ERIKO (JP)
SATO TADAHIRO (JP)
KITAHARA KEN (JP)
KITAHARA ERIKO (JP)
Application Number:
PCT/JP2013/067945
Publication Date:
December 31, 2014
Filing Date:
June 29, 2013
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; C30B15/10
Domestic Patent References:
| WO2013094318A1 | 2013-06-27 | |||
| WO2008007637A1 | 2008-01-17 |
Foreign References:
| JP2003267781A | 2003-09-25 | |||
| JPH04198084A | 1992-07-17 | |||
| JP2013139356A | 2013-07-18 |
Other References:
None
Attorney, Agent or Firm:
MIYABE Takeshi et al. (JP)
Takashi Miyabe (JP)
Takashi Miyabe (JP)
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