SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR DEPOSITION, VAPOR DEPOSITION SUBSTRATE, AND MANUFACTURING METHODS THEREFOR

Title:

SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR DEPOSITION, VAPOR DEPOSITION SUBSTRATE, AND MANUFACTURING METHODS THEREFOR

Document Type and Number:

WIPO Patent Application WO/2021/210354

Kind Code:

A1

Abstract:

The present invention is a silicon single crystal substrate for vapor deposition, the silicon single crystal substrate being composed of FZ crystals having a resistivity of at least 1,000 Ωcm, and including, on the surface thereof, a high-nitrogen-concentration layer having a higher nitrogen concentration than other areas, having a nitrogen concentration of at least 5×1015 atoms/cm3, and having a thickness of 10-100 μm. Consequently, a silicon single crystal substrate, which is for vapor deposition, is for suppressing the occurrence of warpage abnormalities or bonding defects, and is less likely to be plastically deformed, is provided.

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Inventors:

TSUCHIYA KEITARO (JP)
SHINOMIYA MASARU (JP)
QU WEIFENG (JP)

Application Number:

PCT/JP2021/011845

Publication Date:

October 21, 2021

Filing Date:

March 23, 2021

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)

International Classes:

C30B29/06; C23C16/34; C30B13/00; C30B25/18; C30B29/38; C30B33/02; C30B33/10

Domestic Patent References:

WO2005010243A1

2005-02-03

Foreign References:

JP2016111044A	2016-06-20
JP2012079952A	2012-04-19