SILICON SUBSTRATE ANALYSIS METHOD

WIPO Patent Application WO/2016/039032

A1

The present invention provides a method that makes it possible to highly accurately detect trace metal or some other object of analysis included in a silicon substrate and carry out profile analysis of the concentration of the object of analysis in the substrate depth direction. The present invention relates to a silicon substrate analysis method having an oxidized layer formation step for supplying an oxygen gas including ozone and forming an oxidized layer on the surface of a silicon substrate and a recovery step for recovering the object of analysis using a substrate analysis nozzle. The substrate analysis nozzle is configured from a double tube structure and has a gas discharge means having the space between a nozzle main body and an outer tube as a gas discharge path. The recovery step is carried out while gas is discharged by the gas discharge means through the space between the nozzle main body and outer tube of the substrate analysis nozzle. The repetition one or more times of a single cycle of the oxidized layer formation step, the recovery step, and an arbitrary drying step results in the taking in by an analysis liquid of the object of analysis included in the depth direction of the substrate.

KAWABATA KATSUHIKO (JP)
HAYASHI TAKUMA (JP)
IKEUCHI MITSUMASA (JP)

PCT/JP2015/071438

March 17, 2016

July 29, 2015

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IAS INC (JP)

G01N1/28; H01L21/66

JPH11233578A	1999-08-27
JP2011128033A	2011-06-30
JP2001077158A	2001-03-23
JPH04360551A	1992-12-14
JPH0729953A	1995-01-31
JPH05256749A	1993-10-05
JPH05283498A	1993-10-29
JP2002050666A	2002-02-15

TANAKA AND OKAZAKI (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)

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