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Title:
SILICON WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2008/004379
Kind Code:
A1
Abstract:
Provided is a silicon wafer manufacturing method having at least a step of performing RTA heat treatment to a silicon wafer in an atmosphere gas. The method is characterized in that nitrogen gas is used as the atmosphere gas, and heat treatment is performed by using a gas prepared by mixing oxygen at a concentration of less than 100ppm with the nitrogen gas. Thus, temperature and time of the RTA heat treatment to be performed to the silicon wafer are reduced, generation of slip dislocation of the silicon wafer is suppressed, a hole is formed inside the silicon wafer without using NH3, and a high quality silicon wafer is manufactured.

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Inventors:
QU WEI FEIG (JP)
Application Number:
PCT/JP2007/060601
Publication Date:
January 10, 2008
Filing Date:
May 24, 2007
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
QU WEI FEIG (JP)
International Classes:
H01L21/322; H01L21/26
Foreign References:
JP2005515633A2005-05-26
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa,2-chome, Taito-k, Tokyo 41, JP)
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