SIMOX SUBSTRATE MANUFACTURING METHOD

Title:

SIMOX SUBSTRATE MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2006/009148

Kind Code:

A1

Abstract:

An SIMOX substrate is manufactured by performing heat treatment to a silicon substrate wherein oxygen ions are injected, in a mixed gas atmosphere of argon and oxygen at 1,300-1,350°C. After oxygen ion injection and prior to the heat treatment, preheat treatment is performed to the silicon substrate, in an atmosphere of an inert gas or a reducing gas or a mixed gas at a temperature within a range of 1,000°C to 1,280°C, for 5 minutes to 4 hours. The silicon substrate wherein oxygen ions are injected preferably has a crystal defect density of 1×10⁵cm^-3 or more, which is of void defect or COP, and a maximum frequency of size distribution of the crystal defect of 0.12µm or less. More preferably, after the preheat treatment, the temperature of the silicon substrate is reduced to 600°C to 1,100°C, in the atmosphere of the inert gas or the reducing gas or a mixed gas of these, and then heat-treated in the mixed gas atmosphere of argon and oxygen.

Inventors:

ADACHI NAOSHI (JP)
KOMATSU YUKIO (JP)

Application Number:

PCT/JP2005/013259

Publication Date:

January 26, 2006

Filing Date:

July 19, 2005

Export Citation:

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Assignee:

SUMCO CORP (JP)
ADACHI NAOSHI (JP)
KOMATSU YUKIO (JP)

International Classes:

H01L21/02; H01L21/265; H01L21/324; H01L27/12

Foreign References:

JPH1140512A	1999-02-12
JPH1098047A	1998-04-14
JPH01122019A	1989-05-15
JPS6472533A	1989-03-17
JP2001223220A	2001-08-17
JPH07193072A	1995-07-28
JPH05335301A	1993-12-17

Other References: