Title:
SINGLE-CHANNEL MEMRISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/227882
Kind Code:
A1
Abstract:
A single-channel memristor and a preparation method therefor. The single-channel memristor comprises a functional layer, which is formed by first functional layers (1) and second functional layers (2) in a stacked manner, wherein there is a lattice mismatch between a first memristor material used by each first functional layer (1) and a second memristor material used by each second functional layer (2), and the degree of lattice mismatch is not less than 5%. On the basis of a voltage effect, conductive wires may be formed on interfaces of the first functional layers (1) and the second functional layers (2), thereby realizing a single-channel memristor function. The first functional layers (1) and the second functional layers (2) are provided, and conductive filaments are constructed by using defects, such as vacancies and dangling bonds, which are formed at interfaces of memristor materials which have unmatched interfaces and are close to perfect lattices, such that the conductive filaments are limited at the interfaces to form single-channel conductive filaments; and the morphology and the on-off positions of the single-channel conductive filaments are relatively fixed, and therefore the problem of consistency of a memristor device can be solved.
Inventors:
SUN HUAJUN (CN)
WANG TAO (CN)
BAI NA (CN)
MIAO XIANGSHUI (CN)
WANG TAO (CN)
BAI NA (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2022/080051
Publication Date:
November 03, 2022
Filing Date:
March 10, 2022
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
H01L45/00
Foreign References:
| CN113285020A | 2021-08-20 | |||
| CN103258958A | 2013-08-21 | |||
| CN108878642A | 2018-11-23 | |||
| CN110416408A | 2019-11-05 | |||
| CN110911560A | 2020-03-24 |
Attorney, Agent or Firm:
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY PATENT AGENCY CENTER (CN)
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