Title:
SINGLE-CRYSTAL GROWTH APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/013301
Kind Code:
A1
Abstract:
Provided is a single-crystal growth apparatus for growing a single crystal by irradiation with heating laser light. Provided is a growth apparatus provided with: a raw material rod extending along a first direction, the vertical direction being the first direction; and M laser irradiation heads for radiating M heating laser beams to the raw material rod, the laser irradiation heads being provided in a radial pattern with the raw material rod at the center thereof; the irradiation intensity distribution of the M heating laser beams in a two-dimensional plane orthogonal to the optical axes of the heating laser beams having heating laser beams having an irradiation intensity distribution asymmetrical in the first direction, a second irradiation intensity distribution in a second direction orthogonal to the first direction having a substantially uniform irradiation intensity, and the irradiation intensity gradually decreasing downward and the irradiation intensity steeply decreasing upward in the irradiation intensity distribution in the first direction.
Inventors:
KANEKO YOSHIO (JP)
TOKURA YOSHINORI (JP)
KAGA NAOHIRO (JP)
SANO NAOKI (JP)
TOKURA YOSHINORI (JP)
KAGA NAOHIRO (JP)
SANO NAOKI (JP)
Application Number:
PCT/JP2018/026393
Publication Date:
January 17, 2019
Filing Date:
July 12, 2018
Export Citation:
Assignee:
RIKEN (JP)
AUREA WORKS CORP (JP)
AUREA WORKS CORP (JP)
International Classes:
C30B13/24; C30B13/30
Foreign References:
| JP2016199411A | 2016-12-01 | |||
| JPS6241075U | 1987-03-11 | |||
| JPS4816082Y1 | 1973-05-08 | |||
| JP2008093706A | 2008-04-24 | |||
| JPH09260302A | 1997-10-03 | |||
| JPH08203822A | 1996-08-09 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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