Title:
SINGLE-CRYSTAL PRODUCTION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2006/040878
Kind Code:
A1
Abstract:
A single-crystal production apparatus for growing of a silicon single-crystal according to the Czochralski method, characterized by having at least a gas rectifier tube disposed so as to surround a silicon single-crystal in a chamber for carrying out the single-crystal growing and capable of aligning the stream of gas introduced in the chamber, the gas rectifier tube having a foamed quartz material disposed thereinside. Thus, in the growing of CZ silicon single-crystal, constantly controlling of single-crystal in-plane radial F/G at a given value can be accomplished to thereby enable efficient production of a silicon single-crystal having in-plane uniform desirable defect regions. Further, any Fe and Cu impurity contamination can be avoided to thereby provide a single-crystal production apparatus capable of production of a high-quality silicon single-crystal.
Inventors:
SAKURADA MASAHIRO (JP)
Application Number:
PCT/JP2005/015074
Publication Date:
April 20, 2006
Filing Date:
August 18, 2005
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
SAKURADA MASAHIRO (JP)
SAKURADA MASAHIRO (JP)
International Classes:
C30B15/00; C30B29/06; (IPC1-7): C30B29/06; C30B15/00
Domestic Patent References:
| WO2002031233A1 | 2002-04-18 |
Foreign References:
| JPH059096A | 1993-01-19 | |||
| JPH05238874A | 1993-09-17 | |||
| JPH07300341A | 1995-11-14 | |||
| JP2001002491A | 2001-01-09 |
Attorney, Agent or Firm:
Yoshimiya, Mikio (6-4 Motoasakusa 2-chom, Taito-ku Tokyo, JP)
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