Title:
SINGLE-PHOTON AVALANCHE DIODE AND PHOTOELECTRIC SENSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/133660
Kind Code:
A1
Abstract:
A single-photon avalanche diode (SPAD) and a photoelectric sensing device, which relate to the technical field of photoelectrics, and can lower the breakdown voltage of an avalanche junction (A). The SPAD comprises: a substrate (10) and an epitaxial layer (20); the epitaxial layer (20) comprises a first type doped region (21) and a second type doped region (22), and a first type edge doped region (S1) and a second type edge doped region (S2); the first type edge doped region (S1) is disposed surrounding the periphery of the first type doped region (21); the second type edge doped region (S2) comprises: a part which is located around the second type doped region (22) and which is disposed opposite to the first type edge doped region (S1); the doping type of the first type edge doped region (S1) is the same as that of the first type doped region (21), and the doping concentration of the first type edge doped region (S1) is less than the doping concentration of the first type doped region (21); the doping type of the second type edge doped region (S2) is the same as that of the second type doped region (22), and the doping concentration of the second type edge doped region (S2) is less than the doping concentration of the second type doped region (22); and the doping type of the first type doped region (21) is opposite to that of the second type doped region (22).
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Inventors:
CHENG WENXUAN (CN)
CAO JUNKAI (CN)
YU LIQIANG (CN)
LI YUNTAO (CN)
ZHANG JIAN (CN)
CAO JUNKAI (CN)
YU LIQIANG (CN)
LI YUNTAO (CN)
ZHANG JIAN (CN)
Application Number:
PCT/CN2020/138057
Publication Date:
June 30, 2022
Filing Date:
December 21, 2020
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L31/107; H01L31/0352
Foreign References:
| CN108039390A | 2018-05-15 | |||
| CN110767767A | 2020-02-07 | |||
| US20150054111A1 | 2015-02-26 | |||
| US20060192086A1 | 2006-08-31 | |||
| US20170092801A1 | 2017-03-30 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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