Title:
SINTERED OXIDE AND OXIDE SEMICONDUCTOR THIN FILM
Document Type and Number:
WIPO Patent Application WO/2012/029455
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a sintered oxide which does not contain gallium (Ga) that is expensive and which has low bulk resistance, and to also provide an oxide semiconductor thin film which has the same chemical composition as that of the sintered oxide. A sintered oxide comprising indium (In), zinc (Zn), a metal element (X) (wherein X represents at least one element selected from Al and Ti) and oxygen (O), wherein the ratio of the number of atoms among indium (In), zinc (Zn) and the metal element (X) fulfils the requirements represented by the following formulae 0.2 ≤ In/(In+Zn+X) ≤ 0.8, 0.1 ≤ Zn/(In+Zn+X) ≤ 0.5, and 0.1 ≤ X/(In+Zn+X) ≤ 0.5; and an oxide semiconductor film which has the same chemical composition as that of the sintered oxide.
Inventors:
TAKAMI HIDEO (JP)
OSADA KOZO (JP)
OSADA KOZO (JP)
Application Number:
PCT/JP2011/067133
Publication Date:
March 08, 2012
Filing Date:
July 27, 2011
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
TAKAMI HIDEO (JP)
OSADA KOZO (JP)
TAKAMI HIDEO (JP)
OSADA KOZO (JP)
International Classes:
C04B35/00; H01L21/363; H01L29/786
Domestic Patent References:
| WO2009081885A1 | 2009-07-02 |
Foreign References:
| JP2009253204A | 2009-10-29 | |||
| JPH08245220A | 1996-09-24 | |||
| JPH1045496A | 1998-02-17 | |||
| JPH09152940A | 1997-06-10 | |||
| JP2010150093A | 2010-07-08 | |||
| JP2009231613A | 2009-10-08 |
Attorney, Agent or Firm:
AXIS Patent International (JP)
Axis international patent business corporation (JP)
Axis international patent business corporation (JP)
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Claims: