Title:
SINTERED OXIDE AND OXIDE SEMICONDUCTOR THIN FILM
Document Type and Number:
WIPO Patent Application WO/2012/029454
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a sintered oxide for use in producing an oxide semiconductor thin film which is free from expensive gallium (Ga) and the problem of providing an oxide semiconductor thin film having the same composition as that of the sintered oxide. A sintered oxide which consists of trivalent indium ions (In3+), trivalent iron ions (Fe3+), divalent X ions (X2+) [wherein X is at least one element selected from among Cu, Zn and Fe], and oxide ions (O2-), wherein the atomic ratios of trivalent indium ions (In3+), trivalent iron ions (Fe3+) and divalent X ions (X2+) satisfy 0.2 ≤ (In3+)/{(In3+)+(Fe3+)+(X2+)} ≤ 0.8, 0.1 ≤ (Fe3+)/{(In3+)+(Fe3+) +(X2+)} ≤ 0.5, and 0.1 ≤ (X2+)/{(In3+)+(Fe3+)+(X2+)} ≤ 0.5 respectively; and an oxide semiconductor thin film which has the same composition as that of the sintered oxide.
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Inventors:
TAKAMI HIDEO (JP)
OSADA KOZO (JP)
OSADA KOZO (JP)
Application Number:
PCT/JP2011/067131
Publication Date:
March 08, 2012
Filing Date:
July 27, 2011
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
TAKAMI HIDEO (JP)
OSADA KOZO (JP)
TAKAMI HIDEO (JP)
OSADA KOZO (JP)
International Classes:
H01L21/363; C04B35/00; C04B35/453; H01L29/786
Domestic Patent References:
| WO2004079038A1 | 2004-09-16 |
Foreign References:
| JP2010150093A | 2010-07-08 | |||
| JP2009253204A | 2009-10-29 | |||
| JP2009231613A | 2009-10-08 |
Attorney, Agent or Firm:
AXIS Patent International (JP)
Axis international patent business corporation (JP)
Axis international patent business corporation (JP)
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Claims: