SOI WAFER AND PRODUCTION METHOD THEREFOR

WIPO Patent Application WO/2004/010505

A1

A production method for an SOI wafer, capable of reducing both an intra-wafer film thickness uniformity and an inter-wafer film thickness uniformity to sufficiently low levels even if the required film thickness level of an SOI layer is very low. Specifically, a peeling ion implantation layer (4) is formed in a bond wafer (1), and an etch stopping ion implantation layer (6) is formed in a position shallower than the peeling ion implantation layer (4). Then, after the bond wafer (1) formed with two ion implantation layers (4, 6) is coupled with a base wafer (7), a bond silicon single-crystal thin film (5) is peeled off the bond wafer (1) by the peeling ion implantation layer (4). And, the front layer of the bond silicon single-crystal thin film (5) pasted on the base wafer (7) by this peeling is etched back up to an etch stop layer (6') formed based on the etch stopping ion implantation layer (6).

MITANI KIYOSHI (JP)
YOKOKAWA ISAO (JP)

PCT/JP2003/009006

January 29, 2004

July 16, 2003

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SHINETSU HANDOTAI KK (JP)
MITANI KIYOSHI (JP)
YOKOKAWA ISAO (JP)

H01L21/265; H01L21/762; (IPC1-7): H01L27/12; H01L21/265

WO1998042010A1

1998-09-24

JPH021914A	1990-01-08
JPH05129258A	1993-05-25
JP2001284558A	2001-10-12
JPH027468A	1990-01-11
JPH0479372A	1992-03-12
EP0553852A2	1993-08-04
JPH0878647A	1996-03-22
JP2000188082A	2000-07-04
JPH04115511A	1992-04-16
JPH1098049A	1998-04-14
EP1174926A1	2002-01-23

Sugawara, Seirin (9-30 Sakae 2-chome, Naka-k, Nagoya-shi Aichi, JP)

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