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Patent Searching and Data


Title:
SOLID-STATE IMAGE CAPTURE ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/086180
Kind Code:
A1
Abstract:
The present disclosure relates to a solid-state image capture element, a manufacturing method, and an electronic device with which higher density can be achieved in a solid-state image capture element. Lower electrodes are provided on a pixel by pixel basis so as to sandwich a photoelectric conversion film including organic material between the lower electrode and an upper electrode. Separation regions are disposed so as to separate the lower electrodes between pixels, each separation region comprising at least a fixed charge film having a fixed charge. The separation regions are formed from the fixed charge film which is formed deeper than the thickness of the lower electrodes. For example, if the solid-state image capture element is of a hole reading system, the fixed charge film has a positive fixed charge. If the solid-state image capture element is of an electron reading system, the fixed charge film has a negative fixed charge. The present technology can be applied, for example, to a solid-state image capture element having an organic photoelectric conversion film.

Inventors:
MURATA KENICHI (JP)
Application Number:
PCT/JP2016/082738
Publication Date:
May 26, 2017
Filing Date:
November 04, 2016
Export Citation:
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Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H04N5/369
Foreign References:
US20090115014A12009-05-07
JP2011216639A2011-10-27
JP2013175494A2013-09-05
JP2011198855A2011-10-06
JPH08116045A1996-05-07
JP2011249623A2011-12-08
JP2012124318A2012-06-28
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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