SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS

WIPO Patent Application WO/2018/163838

A1

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

UCHIDA TETSUYA (JP)
SUZUKI RYOJI (JP)
ANSAI HISAHIRO (JP)
UEDA YOICHI (JP)
YOSHIDA SHINICHI (JP)
TAKEYA YUKARI (JP)
HIRANO TOMOYUKI (JP)
MORI HIROYUKI (JP)
NOMURA HIROTOSHI (JP)
KUDOH YOSHIHARU (JP)
OHURA MASASHI (JP)
IWABUCHI SHIN (JP)

PCT/JP2018/006415

September 13, 2018

February 22, 2018

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H01L27/146

US20160112614A1	2016-04-21
US20150243700A1	2015-08-27
JP2016162917A	2016-09-05
US6809008B1	2004-10-26
US20160056198A1	2016-02-25
US20100084695A1	2010-04-08
JP2015162603A	2015-09-07

NISHIKAWA Takashi et al. (JP)

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