Title:
SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/193800
Kind Code:
A1
Abstract:
Provided is a solid-state imaging element in which charge is accumulated on a charge accumulation unit, wherein the conversion efficiency for converting charge to voltage is improved. A high-sensitivity-side transfer transistor transfers charge to a first charge accumulation unit from a high-sensitivity photodiode having a sensitivity higher than a predetermined sensitivity. A low-sensitivity-side transfer transistor transfers charge to a second charge accumulation unit from a low-sensitivity photodiode having a sensitivity lower than a predetermined sensitivity. An amplifying transistor amplifies a voltage of the first charge accumulation unit. A first conversion efficiency control transistor controls conversion efficiency for converting charge to voltage by opening/closing a path between the first and second charge accumulation units. A second conversion efficiency control transistor controls conversion efficiency by opening/closing a path between the second charge accumulation unit and a third charge accumulation unit.
More Like This:
| JPH0414950 | PICTURE READER |
| JP3010901 | [Title of Invention] Solid-state image sensor |
| JP6213743 | An imaging device and a drive method for the same |
Inventors:
YONEMOTO KAZUYA (JP)
Application Number:
PCT/JP2019/000551
Publication Date:
October 10, 2019
Filing Date:
January 10, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H04N5/355; H01L27/146; H04N5/3745; H04N5/378
Domestic Patent References:
| WO2017169216A1 | 2017-10-05 | |||
| WO2017141727A1 | 2017-08-24 | |||
| WO2017043343A1 | 2017-03-16 |
Foreign References:
| JP2017004985A | 2017-01-05 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
Download PDF: